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Reduced, stoichiometric and oxidized TiO2(110) surfaces have been compared using valence photoelectron spectroscopy. The results show that the intensity from the band-gap state carries contributions from both oxygen surface vacancies and residual Ti interstitials, present after the sample cleaning procedure. The density of Ti interstitials was found to be 0.05 +/- 0.02 monlayers (ML), while the de
