In Situ Investigation of HfOxAtomic Layer Deposition on (Ag,Cu)(In,Ga)Se2Thin-Film Solar Cell Absorbers : Role of Absorber Bulk Composition and Surface Treatment in HfOxGrowth
Atomic layer deposition (ALD) of HfOx layers has emerged as a promising strategy for interface passivation in chalcopyrite-based thin-film solar cells. However, the nucleation dynamics of (Ag,Cu)(In,Ga)Se2 (ACIGS) absorbers remain insufficiently understood, particularly regarding the interplay between absorber composition and alkali postdeposition treatments (PDTs). Here, we employ in situ ambient
