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This work explores the n-well/p-substrate photodiode in a deep submicron CMOS process. A CMOS chip is designed featuring different structures of the photodiode. When characterized at a wavelength of 850nm DC responsivities between 0.12 and 0.16 A/W and 3-dB bandwidths of about 6 MHz with a roll-off of about 5.5dB/decade are measured. These investigations are very useful in designing the transimped
