Single vertical InP nanowire diodes with low ideality factors contacted in-array for high-resolution optoelectronics
Nanowire (NW) optoelectronic and electrical devices offer unique advantages over bulk materials but are generally made by contacting entire NW arrays in parallel. In contrast, ultra-high-resolution displays and photodetectors require electrical connections to individual NWs inside an array. Here, we demonstrate a scheme for fabricating such single NW vertical devices by contacting individual NWs w
