Physical properties of the heterojunction MoOx/n-CdTe as a function of the parameters of CdTe crystals
MoOx/n-CdTe photosensitive heterostructures were prepared by the deposition of molybdenum oxide thin films onto three different n-type CdTe substrates (ρ1=0.4 Ωfirst>cm, ρ2=10 Ωfirst>cm, ρ3=40 Ωfirst>cm) by DC reactive magnetron sputtering. The height of the potential barrier and series resistance of the MoOx/CdTe heterojunctions were investigated. The dominating current transport mechanisms throu
