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Atomic layer deposition (ALD) of HfOx layers has emerged as a promising strategy for interface passivation in chalcopyrite-based thin-film solar cells. However, the nucleation dynamics of (Ag,Cu)(In,Ga)Se2 (ACIGS) absorbers remain insufficiently understood, particularly regarding the interplay between absorber composition and alkali postdeposition treatments (PDTs). Here, we employ in situ ambient
